Hydrodynamic Models for GaN-Based HEMTs

For the development of next-generation GaN-based high electron mobility transistors, reliable software tools for DC and AC simulation are required. A hydrodynamic approach must be used, as the drift diffusion models fail to deliver accurate results for such structures. We propose two different hydrodynamic mobility models which account for the peculiarities of the GaN material system. The models are implemented in our simulator Minimos-NT and carefully calibrated. A device from a recent transistor generation is measured and simulated using the calibrated setup. A good accuracy for all relevant characteristics is achieved.